We have combined the short range processes of strain-induced self assembly with longer range lithographic forcing functions to create semiconductor nanostructures arrays that can be controlled over many orders of magnitude of length scales. This work uses the input of positional maps from controlled arrays of focused ion beam pulses to locally modify Si substrate surfaces. This “template” then controls the subsequent assembly of (Si)Ge nanostructure arrays through epitaxial growth. We examine how information is transferred from the original template maps into the observed distributions of nanostructures that result, and show that it is possible to accurately template nanostructure arrays over length scales ranging from nanometers to macroscopic dimensions. We also discuss mass-selected focused ion beam methods intended to deliver pulses of electronic or magnetic doping species with doses as small as a few ions per pulse and positional accuracy of order ten nm. With such methods we hope to functionalize ordered nanostructure arrays to develop prototype nanoelectronic devices based on motion of just a few units of electronic charge or spin. The requirements for ion species, energies, pulse length, and beam diameters will be discussed.

Work in collaboration with J. Floro (UVa), J. Gray (U. Pittsburgh), Frances Ross (IBM), M. Gherasimova (S. Connecticut State), M. Kammler (U. Duisberg), A. Portavoce (CNRS), J. Graham (FEI, ) P. Balasubramanian, S. W. Chee and J. Murphy (RPI).