Wednesday 3
Ion Beams: single ion source
Pierre Pillet
› 11:30 - 11:50 (20min)
Novel ion traps for deterministic ion implantation
Georg Jacob  1@  
1 : Intitut für Physik (Uni Mainz) Staudingerweg 7 55128 Mainz - Germany

Novel ion trap geometries for deterministic high resolution ion implantation are presented which are obtained by highly efficient field calculation methods [1]. I will present our recent progress with a segmented ion trap with mK laser cooled ions which serves as a high resolution deterministic single ion source. It can operate with a huge range of sympathetically cooled ion species, isotopes or ionic molecules. We have deterministically extracted a predetermined number of ions on demand [2] a first step in the realization of an atomic nano assembler, a novel device capable of placing an exactly defined number of atoms or molecules into solid state substrates with sub nano meter precision in depth and lateral position. Current state of the art production techniques do not offer these possibilities and pose a major production problem for the realization of scaled solid state quantum devices. The project is motivated by the quest for novel tailored solid state quantum materials generated by deterministic high resolution ion implantation. The major goals are the deterministic generation of colour centers or quantum dots, placing them in special geometries in order to exploit the mutual coupling for the realization of macroscopic functional systems and interfacing them to the macroscopic world with the help of electrode structures, single electron transistors and optical micro cavities. Targeted applications range from quantum repeater, correlated triggered multi photon sources, calibrated single photon sources, quantum computation circuits and sensors with unprecedented sensitivity. Driven by the quest for novel trap geometries for precision ion implantation I will also present new planar and three dimensional trap geometries which allow for the application of variable rf fields for precise positioning of ions in two dimensions [3] targetting parallel extraction of ions from a chip trap.

 

[1] K. Singer, U. G. Poschinger, M. Murphy, P. A. Ivanov, F. Ziesel, T. Calarco, F. Schmidt- Kaler, Rev. Mod. Phys. 82, 2609 (2010).

[2] W. Schnitzler, N. M. Linke, R. Fickler, J. Meijer, F. Schmidt-Kaler, and K. Singer, Phys. Rev. Lett. 102, 070501 (2009).

[3] T. Karin, I. Le Bras, A. Kehlberger, K. Singer, N. Daniilidis, H. Häffner, Applied Physics B: Lasers and Optics , 1-9 (2011), arXiv:1011.6116.


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